K. Pakuła

Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen, T. Laine, S. Kuisma et al. · Physical Review Letters · 1997 · 491 citations

Wide-bandgap Semiconductor, Gan Bulk Crystals, Positron Annihilation +15

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 409 citations

Materials Science, Aluminium Nitride, Engineering +10

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

K. Pakuła, A. Wysmołek, K.P. Korona et al. · Solid State Communications · 1996 · 131 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +10

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

J. Oila, V. Ranki, Jani Kivioja et al. · Physical review. B, Condensed matter · 2001 · 114 citations

Materials Engineering, Wide-bandgap Semiconductor, Epitaxial Growth +13

Polariton effects in reflectance and emission spectra of homoepitaxial GaN

R. Stępniewski, K.P. Korona, A. Wysmołek et al. · Physical review. B, Condensed matter · 1997 · 91 citations

Engineering, Semiconductors, Polariton Dynamic +17