J. Jun

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 409 citations

Materials Science, Aluminium Nitride, Engineering +10

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

J. Karpiński, J. Jun, S. Porowski · Journal of Crystal Growth · 1984 · 386 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Towards the Identification of the Dominant Donor in GaN

P. Perlin, T. Suski, H. Teisseyre et al. · Physical Review Letters · 1995 · 300 citations

Materials Science, Wide-bandgap Semiconductor, Photoluminescence +14

Thermal expansion of gallium nitride

M. Leszczyński, T. Suski, H. Teisseyre et al. · Journal of Applied Physics · 1994 · 223 citations

Materials Science, Gallium Nitride, Engineering +15

Mechanism of yellow luminescence in GaN

T. Suski, P. Perlin, H. Teisseyre et al. · Applied Physics Letters · 1995 · 216 citations

Materials Science, Photoluminescence, Engineering +11