Kacper Sierakowski

High Pressure Processing of Ion Implanted GaN

Kacper Sierakowski, Paweł Kwiatkowski, Małgorzata Iwińska et al. · Electronics · 2020 · 63 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +9

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

M. Hayden Breckenridge, James Tweedie, Pramod Reddy et al. · Applied Physics Letters · 2021 · 57 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Tetsu Kachi, Tetsuo Narita, Hideki Sakurai et al. · Journal of Applied Physics · 2022 · 43 citations

Materials Science, P-type Doping, Electrical Engineering +14

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai et al. · Applied Physics Express · 2021 · 39 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Tetsuo Narita et al. · Scientific Reports · 2020 · 37 citations · Full text