Kacper Sierakowski

High Pressure Processing of Ion Implanted GaN

Kacper Sierakowski, Paweł Kwiatkowski, Małgorzata Iwińska et al. · Electronics · 2020 · 66 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

M. Hayden Breckenridge, James Tweedie, Pramod Reddy et al. · Applied Physics Letters · 2021 · 59 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Tetsu Kachi, Tetsuo Narita, Hideki Sakurai et al. · Journal of Applied Physics · 2022 · 50 citations

Engineering, Materials Engineering, Materials Science +17

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai et al. · Applied Physics Express · 2021 · 40 citations

Engineering, Materials Engineering, Materials Science +16

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Tetsuo Narita et al. · Scientific Reports · 2020 · 39 citations · Full text

Engineering, Materials Engineering, Materials Science +13