Pramod Reddy

The 2020 UV emitter roadmap

Hiroshi Amano, Ramón Collazo, Carlo De Santi et al. · Journal of Physics D Applied Physics · 2020 · 489 citations · Full text

On compensation in Si-doped AlN

Joshua S. Harris, Jonathon N. Baker, Benjamin E. Gaddy et al. · Applied Physics Letters · 2018 · 150 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +15

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Isaac Bryan, Zachary Bryan, Shun Washiyama et al. · Applied Physics Letters · 2018 · 136 citations

Materials Science, Materials Engineering, Semiconductors +15

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Wei Guo, Ronny Kirste, Isaac Bryan et al. · Applied Physics Letters · 2015 · 92 citations

Materials Science, Materials Engineering, Chemical Engineering +13

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Pramod Reddy, Isaac Bryan, Zachary Bryan et al. · Journal of Applied Physics · 2014 · 91 citations · Full text

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +19