Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Isaac Bryan, Zachary Bryan, Seiji Mita, +4

Journal of Crystal Growth

Materials ScienceAln GrowthAluminium NitrideEngineeringSurface Kinetics +8

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Zachary Bryan, Isaac Bryan, Jinqiao Xie, +3

Applied Physics Letters

Materials ScienceHigh IqeElectrical EngineeringOptical MaterialsPoint Defects +13

On compensation in Si-doped AlN

Joshua S. Harris, Jonathon N. Baker, Benjamin E. Gaddy, +7

Applied Physics Letters

Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceSi-doped Aln +13

The role of surface kinetics on composition and quality of AlGaN

Isaac Bryan, Zachary Bryan, Seiji Mita, +7

Journal of Crystal Growth

Materials ScienceAluminium NitrideEngineeringCorrosionSurface Kinetics +8

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Isaac Bryan, Zachary Bryan, Shun Washiyama, +11

Applied Physics Letters

Materials ScienceMaterials EngineeringSemiconductorsElectrical EngineeringSingle Crystal Aln +13

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Wei Guo, Ronny Kirste, Isaac Bryan, +6

Applied Physics Letters

Materials ScienceMaterials EngineeringChemical EngineeringElectrical EngineeringAl Composition +11

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Pramod Reddy, Isaac Bryan, Zachary Bryan, +4

Journal of Applied Physics

Wide-bandgap SemiconductorAluminium NitrideEngineeringIii-nitride SurfacesSemiconductors +17

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, +12

Applied Physics Letters

Materials ScienceAluminium NitrideIi-vi SemiconductorPhotoluminescenceEngineering +10

Comparative study of etching high crystalline quality AlN and GaN

Weihua Guo, Jinqiao Xie, Christer‐Rajiv Akouala, +6

Journal of Crystal Growth

Materials EngineeringMaterials ScienceAluminium NitrideEngineeringApplied Physics +6

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Pramod Reddy, Isaac Bryan, Zachary Bryan, +6

Applied Physics Letters

Aluminium NitrideWide-bandgap SemiconductorEngineeringCharge TransportCharge Neutrality Levels +14