Kensuke Sumida

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Tetsu Kachi, Tetsuo Narita, Hideki Sakurai et al. · Journal of Applied Physics · 2022 · 43 citations

Materials Science, P-type Doping, Electrical Engineering +14

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai et al. · Applied Physics Express · 2021 · 39 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping

Hideki Sakurai, Tetsuo Narita, Keita Kataoka et al. · Applied Physics Express · 2021 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

Kazufumi Hirukawa, Kensuke Sumida, Hideki Sakurai et al. · Applied Physics Express · 2021 · 29 citations

Materials Engineering, Materials Science, Electrical Engineering +12