M. E. Levinshteĭn

Carrier mobility model for GaN

T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva et al. · Solid-State Electronics · 2003 · 258 citations

Electrical Engineering, Engineering, Applied Physics +3

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

M. E. Levinshteĭn, S. L. Rumyantsev, R. Gaška et al. · Applied Physics Letters · 1998 · 103 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

N. Dyakonova, F. Teppe, J. Łusakowski et al. · Journal of Applied Physics · 2005 · 83 citations · Full text

Plasma Waves, Electrical Engineering, Engineering +11

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

S. L. Rumyantsev, Nezih Pala, M. S. Shur et al. · Journal of Applied Physics · 2000 · 81 citations

Conventional Hfet Structures, Wide-bandgap Semiconductor, Electrical Engineering +12

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

M. E. Levinshteĭn, T. T. Mnatsakanov, Pavel Ivanov et al. · IEEE Transactions on Electron Devices · 2001 · 79 citations

Electrical Engineering, Engineering, Power Device +10