M. E. Levinshteĭn

Carrier mobility model for GaN

T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva et al. · Solid-State Electronics · 2003 · 264 citations

Engineering, Electrical Engineering, Materials Engineering +12

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

M. E. Levinshteĭn, Sergey Rumyantsev, R. Gaška et al. · Applied Physics Letters · 1998 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

N. Dyakonova, F. Teppe, J. Łusakowski et al. · Journal of Applied Physics · 2005 · 84 citations · Full text

Engineering, Electrical Engineering, Physics +17

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Sergey Rumyantsev, Nezih Pala, M. S. Shur et al. · Journal of Applied Physics · 2000 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

M. E. Levinshteĭn, T. T. Mnatsakanov, Pavel Ivanov et al. · IEEE Transactions on Electron Devices · 2001 · 79 citations

Engineering, Electrical Engineering, Materials Science +15