M. E. Levinshteĭn - Concepedia

Author

M. E. Levinshteĭn

Also Known As

Levinshtein M. E., Levinshtein, M., Levinshtein, M. E., Levinshtein, M.E., Levinshtein, Michael, Levinshtein, Michael E., M E Levinshtein, M E Levinshteĭn, M LEVINSHTEIN, M Levinshtein

308

Publications

Citations

H-Index

Concepts

All Affiliations

Ioffe Institute Wolfspeed, Inc. (United States)Physico-Technical Institute Rensselaer Polytechnic Institute Russian Academy of Sciences

About

M. E. Levinshteĭn is an author at Ioffe Institute specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	91	2.7K
2	Applied Physics	27	77	2.4K
3	Electrical Engineering	27	89	2.6K
4	Education	1	1	72
5	Natural Sciences	1	1	11

M. E. Levinshteĭn

108

Publications

Citations

H-Index

Page 1

	Year	Citations
Carrier mobility model for GaN T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCarrier Mobility Model	2003	258
AlGaN/GaN high electron mobility field effect transistors with low 1/f noise M. E. Levinshteĭn, S. L. Rumyantsev, R. Gaška, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	1998	103
Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors N. Dyakonova, F. Teppe, J. Łusakowski, Journal of Applied Physics Plasma WavesElectrical EngineeringEngineeringPhysicsNanoelectronics	2005	83
Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors S. L. Rumyantsev, Nezih Pala, M. S. Shur, Journal of Applied Physics Conventional Hfet StructuresWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2000	81
"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes M. E. Levinshteĭn, T. T. Mnatsakanov, Pavel Ivanov, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPower DeviceQualitative AnalysisNanoelectronics	2001	79
Noise spectroscopy of local levels in semiconductors M. E. Levinshteĭn, S. L. Rumyantsev Semiconductor Science and Technology SemiconductorsLevel Concentration NtElectrical EngineeringEngineeringPhysics	1994	72
Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors S. L. Rumyantsev, Nezih Pala, M. S. Shur, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringPhysics	2001	66
Carrier mobility model for simulation of SiC-based electronic devices T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva, Semiconductor Science and Technology Device ModelingMaterials EngineeringElectrical EngineeringEngineeringPower Device	2002	65
Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities N. Dyakonova, P. A. Ivanov, M. E. Levinshteĭn, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringKv DiodesEngineeringHigh Voltage Engineering	1999	64
Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures S. L. Rumyantsev, M. S. Shur, M. E. Levinshteĭn, Semiconductor Science and Technology SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2009	60

Page 1