N. B. Strokan

Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors

V. Eremin, N. B. Strokan, E. Verbitskaya et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1996 · 174 citations

Engineering, Electrical Engineering, Electrochemistry +15

Radiation-hard semiconductor detectors for SuperLHC

M. Bruzzi, J. Adey, A. Al-Ajili et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2005 · 60 citations · Full text

Engineering, Physics, Radiation Detection +11

Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

A. А. Lebedev, V. V. Kozlovski, N. B. Strokan et al. · Semiconductors · 2002 · 40 citations

Engineering, Materials Engineering, Materials Science +16

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

V. V. Emtsev, V. V. Kozlovski, A. А. Lebedev et al. · Semiconductors · 2012 · 40 citations

Engineering, Materials Engineering, Materials Science +17

Development of radiation tolerant semiconductor detectors for the Super-LHC

M. Moll, J. Adey, A. Al-Ajili et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2005 · 40 citations

Engineering, Electrical Engineering, Physics +12