Anatoly M. Strel’chuk

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov et al. · Journal of Applied Physics · 2000 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N.S. Savkina, A. А. Lebedev, D. V. Davydov et al. · Materials Science and Engineering B · 2000 · 44 citations

Engineering, Materials Engineering, Materials Science +14

Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

A. А. Lebedev, V. V. Kozlovski, N. B. Strokan et al. · Semiconductors · 2002 · 40 citations

Engineering, Materials Engineering, Materials Science +16

Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

M. M. Anikin, A. A. Lebedev, S.N. Pyatko et al. · Materials Science and Engineering B · 1992 · 29 citations

Engineering, Materials Engineering, Materials Science +14

Fabrication and electrical characterization of 4H-SiC p+–n–n+ diodes with low differential resistance

Konstantin Vassilevski, Konstantinos Zekentes, G. Constantinidis et al. · Solid-State Electronics · 2000 · 24 citations

Engineering, Electrical Engineering, Materials Science +16