M. M. Anikin - Concepedia

Author

M. M. Anikin

Centre National de la Recherche Scientifique

Also Known As

Anikin, M., M Anikin, M. Anikin, M. M. Anikin, M.M. Anikin, Michail Anikin, Michaïl Anikin

Publications

378

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique CEA Grenoble Commissariat à l'Énergie Atomique et aux Énergies Alternatives Science et Ingénierie des Matériaux et Procédés Physico-Technical Institute

About

M. M. Anikin is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	257
2	Applied Physics	9	9	235
3	Electrical Engineering	2	2	70
4	Natural Sciences	1	1	20
5	Chemical Engineering	1	1	13

M. M. Anikin

Publications

290

Citations

H-Index

Page 1

	Year	Citations
State of the art in the modelling of SiC sublimation growth M. Pons, M. M. Anikin, K Chourou, Materials Science and Engineering B EngineeringApplied PhysicsSic Sublimation GrowthSolid MechanicsCarbide	1999	57
Electrical and optical characterisation of vanadium in 4H and 6H–SiC V. Lauer, G. Brémond, A. Souifi, Materials Science and Engineering B Materials ScienceElectrical EngineeringOptical MaterialsEngineeringOptical Properties	1999	41
Temperature gradient controlled SiC crystal growth M. M. Anikin, R. Madar Materials Science and Engineering B Materials EngineeringMaterials ScienceEngineeringSic Crystal GrowthCrystal Growth Technology	1997	38
Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system M. M. Anikin, A. A. Lebedev, S.N. Pyatko, Materials Science and Engineering B Materials EngineeringElectrical EngineeringEpitaxial GrowthEngineeringSic Epitaxial Structures	1992	29
UV photodetectors in 6HSiC M. M. Anikin, A. N. Andreev, S.N. Pyatko, Sensors and Actuators A Physical	1992	22
Study of SiC single-crystal sublimation growth conditions I. Garcon, Alain Rouault, M. M. Anikin, Materials Science and Engineering B Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyApplied Physics	1995	21
Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes Jean‐Marie Bluet, K Chourou, M. M. Anikin, Materials Science and Engineering B Materials ScienceEngineeringPhysicsOptical PropertiesInfrared Reflectivity	1999	20
Defects formation in sublimation grown 6H-SiC single crystal boules R. Madar, M. M. Anikin, K Chourou, Diamond and Related Materials Materials EngineeringMaterials ScienceEngineeringCrystalline DefectsCrystal Growth Technology	1997	15
Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals Philippe Grosse, G. Basset, C. Calvat, Materials Science and Engineering B Materials ScienceMaterials EngineeringChemical EngineeringSic CrystalsEngineering	1999	13
Structural defects in SiC ingots investigated by synchrotron diffraction imaging Etienne Pernot, P. Pernot-Rejmánková, M. M. Anikin, Journal of Physics D Applied Physics Materials ScienceEngineeringCrystalline DefectsApplied PhysicsObserved Inclusions	2001	12

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