K Chourou

State of the art in the modelling of SiC sublimation growth

M. Pons, M. M. Anikin, K Chourou et al. · Materials Science and Engineering B · 1999 · 57 citations

Engineering, Applied Physics, Sic Sublimation Growth +5

Electrical and optical characterisation of vanadium in 4H and 6H–SiC

V. Lauer, G. Brémond, A. Souifi et al. · Materials Science and Engineering B · 1999 · 41 citations

Materials Science, Electrical Engineering, Optical Materials +6

Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes

Jean‐Marie Bluet, K Chourou, M. M. Anikin et al. · Materials Science and Engineering B · 1999 · 20 citations

Materials Science, Engineering, Physics +9

Defects formation in sublimation grown 6H-SiC single crystal boules

R. Madar, M. M. Anikin, K Chourou et al. · Diamond and Related Materials · 1997 · 15 citations

Materials Engineering, Materials Science, Engineering +7

Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

Philippe Grosse, G. Basset, C. Calvat et al. · Materials Science and Engineering B · 1999 · 13 citations

Materials Science, Materials Engineering, Chemical Engineering +6