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Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

DOI

13

Citations

6

References

1999

Year

Philippe Grosse, G. Basset, C. Calvat, M. Couchaud, C Faure, B Ferrand, Y. Grange, M. M. Anikin, Jean‐Marie Bluet, K Chourou,
Materials Science and Engineering B

References

YearCitations

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