Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation - Concepedia

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Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation

88

Citations

1

References

1992

Year

René Stein, P. Lanig, S. Leibenzeder

Materials Science and Engineering B

Materials EngineeringMaterials Science4H-sic PolytypesEngineeringSurface EnergyApplied PhysicsHigh-performance MaterialCarbideMaterial PerformanceStructural CeramicMicrostructureCeramic Matrix Composite

References

	Year	Citations
<i>C</i>-<i>V</i> characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layer Akira Suzuki, Kazunobu Mameno, Nobuyuki Furui, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1981	17

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