S. Leibenzeder - Concepedia

Author

S. Leibenzeder

Siemens (Germany)

Also Known As

S. Leibenzeder

Publications

821

Citations

H-Index

Concepts

All Affiliations

Siemens (Germany)Friedrich-Alexander-Universität Erlangen-Nürnberg Fraunhofer Institute for Applied Solid State Physics

About

S. Leibenzeder is an author at Siemens (Germany) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	785
2	Applied Physics	9	9	785
3	Natural Sciences	2	2	360
4	Chemistry	2	2	360
5	Materials Engineering	1	1	88

S. Leibenzeder

Publications

785

Citations

H-Index

Page 1

	Year	Citations
Nitrogen donors in 4<i>H</i>-silicon carbide Werner Götz, Adolf Schöner, Gerhard Pensl, Journal of Applied Physics EngineeringPhysicsNatural SciencesApplied PhysicsQuantum Materials	1993	200
Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide W. Suttrop, Gerhard Pensl, W. J. Choyke, Journal of Applied Physics EngineeringInfrared Absorption MeasurementsCubic Boron NitrideNitrogen DonorChemistry	1992	160
Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide J. Schneider, H. Müller, K. Maier, Applied Physics Letters Optical MaterialsEngineeringPolytype-specific PhotoluminescenceMinority-carrier Lifetime KillerSilicon Carbide	1990	153
Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation René Stein, P. Lanig, S. Leibenzeder Materials Science and Engineering B Materials EngineeringMaterials Science4H-sic PolytypesEngineeringSurface Energy	1992	88
Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC S. Karmann, W. Suttrop, Adolf Schöner, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyElectronic DevicesEngineering	1992	73
Electron spin resonance studies of transition metal deep level impurities in SiC K. Maier, J. Schneider, W. Wilkening, Materials Science and Engineering B Materials ScienceSpintronicsSemiconductor TechnologyEngineeringPhysics	1992	55
Luminescence and Absorption of Vanadium (V<sup>4+</sup>): In 6H-Silicon Carbide A. Dörnen, Ya. I. Latushko, W. Suttrop, Materials science forum Materials SciencePhotoluminescenceEngineeringApplied PhysicsLuminescence Property	1992	23
CVD growth and characterization of single-crystalline 6H silicon carbide S. Karmann, Ch. Haberstroh, F. Engelbrecht, Physica B Condensed Matter Materials ScienceEngineeringCvd GrowthApplied PhysicsSemiconductor Device Fabrication	1993	19
Growth of GaAs single crystals by the floating zone technique under microgravity Robin Rupp, S. Auerochs, G. Müller, Advances in Space Research EngineeringPhysicsCrystal Growth TechnologyApplied PhysicsCondensed Matter Physics	1991	14

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