Adolf Schöner

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Engineering, Deep Defect Centers, Defect Tolerance +17

Nitrogen donors in 4<i>H</i>-silicon carbide

Werner Götz, Adolf Schöner, Gerhard Pensl et al. · Journal of Applied Physics · 1993 · 200 citations

Engineering, Physics, Natural Sciences +14

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

Stefan Hertel, Daniel Waldmann, Johannes Jobst et al. · Nature Communications · 2012 · 121 citations · Full text

Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Adolf Schöner, M. Krieger, Gerhard Pensl et al. · Chemical Vapor Deposition · 2006 · 104 citations

Materials Engineering, Semiconductors, Electrical Engineering +12

Electrical properties of the titanium acceptor in silicon carbide

T. Dalibor, Gerhard Pensl, N. Nordell et al. · Physical review. B, Condensed matter · 1997 · 94 citations

Engineering, Titanium Acceptor, Semiconductor Device +16