Ascatron (Sweden)

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Mietek Bakowski, Per Ranstad, Jang‐Kwon Lim et al. · IEEE Transactions on Electron Devices · 2014 · 20 citations · Full text

Robust Junction Termination, Electrical Engineering, Semiconductor Device +10

Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

P. Hazdra, Stanislav Popelka, Adolf Schöner · IEEE Transactions on Electron Devices · 2018 · 19 citations

Engineering, Nuclear Physics, Radiation Materials Science +16

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

S. Sampayan, Paulius Grivickas, Adam Conway et al. · Scientific Reports · 2021 · 18 citations · Full text

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna et al. · Materials science forum · 2018 · 15 citations · Full text

3C-siс Hetero-epitaxially Grown, Engineering, Silicon On Insulator +18

A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications

M Hussain, Hossein Elahipanah, John E. Zumbro et al. · IEEE Journal of the Electron Devices Society · 2019 · 13 citations · Full text

Low-power Electronics, High-temperature Applications, Electrical Engineering +11