IEEE Transactions on Electron Devices · 2014 · 20 citations · 14 references
Robust Junction TerminationElectrical EngineeringSemiconductor DeviceEngineeringPower DeviceSic P-i-n DiodesPower Electronics ConverterPower Semiconductor DevicePower ElectronicsMicroelectronicsPower Electronic DevicesNewly Developed 10Bipolar Stability
10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter.
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Simulation of SiC High Power Devices
Mietek Bakowski, Ulf Gustafsson, U. Lindefelt · physica status solidi (a) · 1997 · 132 citations · Full text