U. Lindefelt

Ionization rates and critical fields in 4H silicon carbide

Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 397 citations

Electrical Engineering, Epitaxial P-n Diodes, Engineering +13

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Peder Bergman, H. Lendenmann, Per Åke Nilsson et al. · Materials science forum · 2001 · 387 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Relativistic band structure calculation of cubic and hexagonal SiC polytypes

Clas Persson, U. Lindefelt · Journal of Applied Physics · 1997 · 309 citations

Materials Engineering, Materials Science, Electron Density +15

Detailed band structure for 3<i>C</i>-, 2<i>H</i>-, 4<i>H</i>-, 6<i>H</i>-SiC, and Si around the fundamental band gap

Clas Persson, U. Lindefelt · Physical review. B, Condensed matter · 1996 · 153 citations

Wide-bandgap Semiconductor, Effective Masses, Engineering +19

Auger recombination in 4H-SiC: Unusual temperature behavior

Augustinas Galeckas, Jan Linnros, V. Grivickas et al. · Applied Physics Letters · 1997 · 146 citations

Materials Engineering, Semiconductors, Semiconductor Technology +12