Peder Bergman

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Peder Bergman, H. Lendenmann, Per Åke Nilsson et al. · Materials science forum · 2001 · 387 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

H. Lendenmann, Fanny Dahlquist, Nils Johansson et al. · Materials science forum · 2001 · 258 citations

Electrical Engineering, Engineering, High Voltage Engineering +3

Nanoscale Light‐Harvesting Metal–Organic Frameworks

Xuanjun Zhang, Mohamed A. Ballem, Zhangjun Hu et al. · Angewandte Chemie International Edition · 2011 · 149 citations

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Lendenmann, Fanny Dahlquist, Peder Bergman et al. · Materials science forum · 2002 · 139 citations

Semiconductor Technology, Electrical Engineering, Engineering +6

Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

Peter Klason, Thomas Moe Börseth, Qing Zhao et al. · Solid State Communications · 2007 · 128 citations

Ii-vi Semiconductor, Oxygen Vacancy, Photoluminescence +10