Fanny Dahlquist

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

H. Lendenmann, Fanny Dahlquist, Nils Johansson et al. · Materials science forum · 2001 · 258 citations

Electrical Engineering, Engineering, High Voltage Engineering +3

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Lendenmann, Fanny Dahlquist, Peder Bergman et al. · Materials science forum · 2002 · 139 citations

Semiconductor Technology, Electrical Engineering, Engineering +6

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

H. Lendenmann, Peder Bergman, Fanny Dahlquist et al. · Materials science forum · 2003 · 60 citations

Electrical Engineering, Engineering, Dislocation Interaction +5

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Fanny Dahlquist, Carl‐Mikael Zetterling, Mikael Östling et al. · Materials science forum · 1998 · 50 citations

Junction Barrier Schottky, Electrical Engineering, Engineering +9

A 2.8kV, Forward Drop JBS Diode with Low Leakage

Fanny Dahlquist, Jan-Olov Svedberg, Carl‐Mikael Zetterling et al. · Materials science forum · 2000 · 36 citations

Junction Barrier Schottky, Semiconductor Technology, Electrical Engineering +14