Fanny Dahlquist - Concepedia

Author

Fanny Dahlquist

Infineon Technologies (Austria)

Also Known As

F. Dahlquist, Fanny Dahlquist

Publications

636

Citations

H-Index

Concepts

All Affiliations

Infineon Technologies (Austria)ABB (Switzerland)KTH Royal Institute of Technology Linköping University

About

Fanny Dahlquist is an author at Infineon Technologies (Austria) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	619
2	Electrical Engineering	9	9	619
3	Applied Physics	7	7	222
4	Microelectronics	6	6	528
5	Electronic Devices	1	1	36

Fanny Dahlquist

Publications

619

Citations

H-Index

Page 1

	Year	Citations
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes H. Lendenmann, Fanny Dahlquist, Nils Johansson, Materials science forum Electrical EngineeringEngineeringHigh Voltage EngineeringPower Semiconductor DeviceMicroelectronics	2001	258
High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects H. Lendenmann, Fanny Dahlquist, Peder Bergman, Materials science forum Semiconductor TechnologyElectrical EngineeringEngineeringPower DevicePower Semiconductor Device	2002	139
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC H. Lendenmann, Peder Bergman, Fanny Dahlquist, Materials science forum Electrical EngineeringEngineeringDislocation InteractionBias Temperature InstabilityElectrically Active Dislocations	2003	60
Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC Fanny Dahlquist, Carl‐Mikael Zetterling, Mikael Östling, Materials science forum Junction Barrier SchottkyElectrical EngineeringEngineeringPower DeviceNanoelectronics	1998	50
A 2.8kV, Forward Drop JBS Diode with Low Leakage Fanny Dahlquist, Jan-Olov Svedberg, Carl‐Mikael Zetterling, Materials science forum Junction Barrier SchottkySemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2000	36
4.5 kV 4H-SiC diodes with ideal forward characteristic H. Lendenmann, A. Mukhitdinov, Fanny Dahlquist, Semiconductor TechnologyKv 4H-sic DiodesElectrical EngineeringSemiconductor DeviceEngineering	2002	32
Junction barrier Schottky diodes in 6H SiC Carl‐Mikael Zetterling, Fanny Dahlquist, Nils Lundberg, Solid-State Electronics Junction Barrier SchottkyElectrical EngineeringEngineeringApplied PhysicsSemiconductor Device	1998	16
Junction barrier schottky rectifiers in silicon carbide Fanny Dahlquist KTH Publication Database DiVA (KTH Royal Institute of Technology) Electrical EngineeringEngineeringApplied PhysicsSilicon CarbideCarbide	2002	15
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology Michael Treu, Roland Rupp, H. R. Brunner, Materials science forum Electrical EngineeringEngineeringApplied PhysicsCarbideSemiconductor Device Fabrication	2004	13

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