Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC - Concepedia

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Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

60

Citations

5

References

2003

Year

H. Lendenmann, Peder Bergman, Fanny Dahlquist, C. Hallin

Materials science forum

Electrical EngineeringEngineeringDislocation InteractionBias Temperature InstabilityElectrically Active DislocationsApplied PhysicsSic Bipolar DevicesCarbide

References

	Year	Citations

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