Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Peder Bergman, H. Lendenmann, Per Åke Nilsson et al. · Materials science forum · 2001 · 396 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

H. Lendenmann, Fanny Dahlquist, Nils Johansson et al. · Materials science forum · 2001 · 262 citations

Engineering, Electrical Engineering, Semiconductor Devices +4

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Lendenmann, Fanny Dahlquist, Peder Bergman et al. · Materials science forum · 2002 · 140 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

12-19 kV 4H-SiC pin diodes with low power loss

Y. Sugawara, Daisuke Takayama, K. Asano et al. · 2002 · 110 citations

Engineering, Electrical Engineering, Materials Science +13

Dislocation evolution in 4H-SiC epitaxial layers

H. Jacobson, Jens Birch, Rositsa Yakimova et al. · Journal of Applied Physics · 2002 · 102 citations

Natural Sciences, Materials Engineering, Materials Science +17