Sergey A. Reshanov

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

K. V. Emtsev, Aaron Bostwick, K. Horn et al. · Nature Materials · 2009 · 2.6K citations

Materials Science, Materials Engineering, Graphene Nanomeshes +9

Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

Peter Lauffer, K. V. Emtsev, R. Graupner et al. · Physical Review B · 2008 · 382 citations

Materials Science, Layer Thickness, Graphene Nanomeshes +11

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

Stefan Hertel, Daniel Waldmann, Johannes Jobst et al. · Nature Communications · 2012 · 121 citations · Full text

Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Reza Ghandi, Benedetto Buono, Martin Domeij et al. · IEEE Transactions on Electron Devices · 2010 · 60 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

<font>SiC</font> MATERIAL PROPERTIES

Gerhard Pensl, Florin Ciobanu, Thomas Frank et al. · International Journal of High Speed Electronics and Systems · 2005 · 42 citations

Materials Science, Semiconductors, Electrical Engineering +14