Florin Ciobanu

Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

V. V. Afanas’ev, A. Stesmans, Florin Ciobanu et al. · Applied Physics Letters · 2003 · 196 citations

Oxide Heterostructures, Materials Science, Semiconductor Technology +13

Band alignment and defect states at SiC/oxide interfaces

Vorobeĭchikov Ev, Florin Ciobanu, Sima Dimitrijev et al. · Journal of Physics Condensed Matter · 2004 · 148 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)

Kun Gao, Thomas Seyller, L. Ley et al. · Applied Physics Letters · 2003 · 107 citations

Aluminium Nitride, Engineering, Gate Dielectric +19

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Gerhard Pensl, Svetlana Beljakowa, Thomas Frank et al. · physica status solidi (b) · 2008 · 70 citations

Materials Science, Electrical Engineering, Ion Implantation +13

Enhancement of optical absorption and photocurrent of 6H-SiC by laser surface nanostructuring

Qian Zhao, Florin Ciobanu, S. Malzer et al. · Applied Physics Letters · 2007 · 58 citations

Optical Materials, Engineering, Laser Applications +18