Svetlana Beljakowa

4H‐SiC MISFETs with nitrogen‐containing insulators

Masato Noborio, Jun Suda, Svetlana Beljakowa et al. · physica status solidi (a) · 2009 · 79 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Gerhard Pensl, Svetlana Beljakowa, Thomas Frank et al. · physica status solidi (b) · 2008 · 70 citations

Materials Science, Electrical Engineering, Ion Implantation +13

Recombination activity of interstitial chromium and chromium-boron pairs in silicon

Jan Schmidt, Rafael Krain, Karsten Bothe et al. · Journal of Applied Physics · 2007 · 54 citations

Semiconductors, Electronic Devices, Crystalline Silicon +15

Determining the defect parameters of the deep aluminum-related defect center in silicon

Philipp Rosenits, Thomas Roth, Stefan W. Glunz et al. · Applied Physics Letters · 2007 · 51 citations

Materials Science, Deep-level Transient Spectroscopy, Engineering +14

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

Thomas Roth, Philipp Rosenits, S. Diez et al. · Journal of Applied Physics · 2007 · 21 citations · Full text

Engineering, Defect Level, Electronic Properties +16