Masato Noborio

Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N₂O Oxidation

Tsunenobu Kimoto, Y. Kanzaki, Masato Noborio et al. · Japanese Journal of Applied Physics · 2005 · 194 citations

Materials Science, Oxide Heterostructures, Semiconductor Technology +14

4H‐SiC MISFETs with nitrogen‐containing insulators

Masato Noborio, Jun Suda, Svetlana Beljakowa et al. · physica status solidi (a) · 2009 · 79 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

Experimental and Theoretical Investigations on Short-Channel Effects in 4H-SiC MOSFETs

Masato Noborio, Y. Kanzaki, Jun Suda et al. · IEEE Transactions on Electron Devices · 2005 · 58 citations

Electrical Engineering, 4H-sic Mosfets, Engineering +11

P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and $\hbox{N}_{2}\hbox{O}$ Annealing

Masato Noborio, Jun Suda, Tsunenobu Kimoto · IEEE Transactions on Electron Devices · 2009 · 53 citations

Engineering, P-channel Mosfets, Oxide Deposition +17

4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance

Masato Noborio, Jun Suda, Tsunenobu Kimoto · IEEE Transactions on Electron Devices · 2007 · 52 citations

Electrical Engineering, Semiconductor Device, Engineering +11