Determining the defect parameters of the deep aluminum-related defect center in silicon

Abstract

Through a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This aluminum-related defect center is found to be located at an energy level of Et−EV=0.44±0.02eV and exhibits an asymmetric capture cross section, with σp=3.6×10−13cm2 and σn=3.1×10−10cm2 being the hole and electron capture cross sections, respectively. The investigated defect center is attributed to the aluminum-oxygen complex (Al–O).