Applied Physics Letters · 1996 · 1.6K citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationPhotovoltaic DevicesSemiconductor PhysicsSolar Cell MaterialsSolar CellsCarrier LifetimeCarrier Lifetime MeasurementCurrent-voltage RelationsLight IntensityMinority Carrier Lifetime MeasurementSemiconductor CharacterizationSilicon WafersSolar Cell Characterization
A simple method for implementing the steady‑state photoconductance technique to determine minority‑carrier lifetimes in semiconductor materials is presented. Using a contactless instrument, the photoconductance is measured in a quasi‑steady‑state mode during a long, slow‑varying light pulse, and the resulting data are analyzed as a function of incident light intensity to extract current–voltage characteristics for noncontacted silicon wafers and solar cell precursors. The technique allows use of simple electronics and light sources, can determine very low minority‑carrier lifetimes across many semiconductor materials, and enables extraction of implicit current–voltage characteristics for noncontacted silicon wafers and solar cell precursors.
A simple method for implementing the steady-state photoconductance technique for determining the minority-carrier lifetime of semiconductor materials is presented. Using a contactless instrument, the photoconductance is measured in a quasi-steady-state mode during a long, slow varying light pulse. This permits the use of simple electronics and light sources. Despite its simplicity, the technique is capable of determining very low minority carrier lifetimes and is applicable to a wide range of semiconductor materials. In addition, by analyzing this quasi-steady-state photoconductance as a function of incident light intensity, implicit current–voltage characteristic curves can be obtained for noncontacted silicon wafers and solar cell precursors in an expedient manner.
1