Thomas Frank - Concepedia

Author

Thomas Frank

Friedrich-Alexander-Universität Erlangen-Nürnberg ORCID

Also Known As

Frank, T., Frank, Thomas, T Frank, T. Frank, THOMAS FRANK, THOMAS P. FRANK, Thomas Frank

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Friedrich-Alexander-Universität Erlangen-Nürnberg Laboratoire d'Électronique des Technologies de l'Information STMicroelectronics (France)Commissariat à l'Énergie Atomique et aux Énergies Alternatives Techniques of Informatics and Microelectronics for Integrated Systems Architecture

About

Thomas Frank is an author at Friedrich-Alexander-Universität Erlangen-Nürnberg specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	32	1.6K
2	Applied Physics	17	26	1.1K
3	Biomedical Engineering	3	3	272
4	Natural Sciences	2	2	30
5	Chemistry	2	2	185

Thomas Frank

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Doping of SiC by Implantation of Boron and Aluminum T. Troffer, M. Schadt, Thomas Frank, physica status solidi (a) Materials EngineeringMaterials ScienceElectrical EngineeringIon ImplantationEngineering	1997	291
A modular microfluid system with an integrated micromixer Norbert Schwesinger, Thomas Frank, Helmut Wurmus Journal of Micromechanics and Microengineering EngineeringMicromachinesStatic MicromixerMicrofabricationMechanical Engineering	1996	236
Properties of the oxygen vacancy in ZnO D.M. Hofmann, D. Pfisterer, Joachim Sann, Applied Physics A Oxygen Reduction ReactionOxygen VacancyEngineeringOxide ElectronicsCondensed Matter Physics	2007	173
Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric Thomas Frank, S. Moreau, C. Chappaz, Microelectronics Reliability Electrical EngineeringElectromigration TechniqueEngineeringHardware ReliabilityTsv Interconnects	2012	110
Resistance increase due to electromigration induced depletion under TSV Thomas Frank, C. Chappaz, Philip R. LeDuc, Electrical EngineeringElectromigration TechniqueEngineeringSpecific ResistanceAnalytical Model	2011	73
Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, physica status solidi (b) Materials ScienceElectrical EngineeringIon ImplantationEngineeringOxidation Resistance	2008	70
Energetically deep defect centers in vapor-phase grown zinc oxide Thomas Frank, Gerhard Pensl, Ramón Tena‐Zaera, Applied Physics A Materials ScienceMaterials EngineeringEngineeringOxide ElectronicsDeep Defect Centers	2007	49
Vacancies and deep levels in electron-irradiated 6<i>H</i> SiC epilayers studied by positron annihilation and deep level transient spectroscopy A. Kawasuso, F. Redmann, R. Krause‐Rehberg, Journal of Applied Physics SemiconductorsSemiconductor TechnologyPositron AnnihilationDeep LevelsEngineering	2001	46
Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy A. Kawasuso, F. Redmann, R. Krause‐Rehberg, Applied Physics Letters EngineeringPositron Annihilation SpectroscopyZ1/2 LevelsMev Electron IrradiationSemiconductors	2001	45
<font>SiC</font> MATERIAL PROPERTIES Gerhard Pensl, Florin Ciobanu, Thomas Frank, International Journal of High Speed Electronics and Systems Materials ScienceSemiconductorsElectrical EngineeringMaterials EngineeringChapter Briefly	2005	42

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