Sima Dimitrijev

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Huifeng Li, Sima Dimitrijev, H.B. Harrison et al. · Applied Physics Letters · 1997 · 321 citations

Engineering, Materials Engineering, Materials Science +17

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Jamet, Sima Dimitrijev, Philip Tanner · Journal of Applied Physics · 2001 · 270 citations

Engineering, Materials Engineering, Materials Science +17

Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

V. V. Afanas’ev, A. Stesmans, Florin Ciobanu et al. · Applied Physics Letters · 2003 · 197 citations

Natural Sciences, Materials Engineering, Materials Science +17

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

Xi Tang, Baikui Li, Hamid Amini Moghadam et al. · IEEE Electron Device Letters · 2018 · 157 citations

Engineering, Electrical Engineering, Physics +15

Band alignment and defect states at SiC/oxide interfaces

Vorobeĭchikov Ev, Florin Ciobanu, Sima Dimitrijev et al. · Journal of Physics Condensed Matter · 2004 · 149 citations

Engineering, Materials Engineering, Materials Science +17