Sima Dimitrijev

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Huifeng Li, Sima Dimitrijev, H.B. Harrison et al. · Applied Physics Letters · 1997 · 315 citations

Materials Science, Materials Engineering, Interfacial Characteristics +12

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Jamet, Sima Dimitrijev, Philip Tanner · Journal of Applied Physics · 2001 · 269 citations

Materials Science, Semiconductor Technology, Electrical Engineering +10

Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

V. V. Afanas’ev, A. Stesmans, Florin Ciobanu et al. · Applied Physics Letters · 2003 · 196 citations

Oxide Heterostructures, Materials Science, Semiconductor Technology +13

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

Xi Tang, Baikui Li, Hamid Amini Moghadam et al. · IEEE Electron Device Letters · 2018 · 151 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Band alignment and defect states at SiC/oxide interfaces

Vorobeĭchikov Ev, Florin Ciobanu, Sima Dimitrijev et al. · Journal of Physics Condensed Matter · 2004 · 148 citations

Materials Engineering, Materials Science, Electrical Engineering +14