Baikui Li

Interface Engineering of Monolayer MoS₂/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

Zhaofu Zhang, Qingkai Qian, Baikui Li et al. · ACS Applied Materials & Interfaces · 2018 · 287 citations

Engineering, Materials Engineering, Materials Science +17

Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence

Sergii Golovynskyi, Iqra Irfan, Matteo Bosi et al. · Applied Surface Science · 2020 · 169 citations

Natural Sciences, Materials Science, Physics +14

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

Xi Tang, Baikui Li, Hamid Amini Moghadam et al. · IEEE Electron Device Letters · 2018 · 157 citations

Engineering, Electrical Engineering, Physics +15

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Jin Wei, Shenghou Liu, Baikui Li et al. · IEEE Electron Device Letters · 2015 · 115 citations

Engineering, Electrical Engineering, Materials Science +13

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Hongtao He, Baikui Li, Hongchao Liu et al. · Applied Physics Letters · 2012 · 114 citations

Natural Sciences, Materials Science, Physics +14