Baikui Li

Interface Engineering of Monolayer MoS₂/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

Zhaofu Zhang, Qingkai Qian, Baikui Li et al. · ACS Applied Materials & Interfaces · 2018 · 277 citations

Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence

Sergii Golovynskyi, Iqra Irfan, Matteo Bosi et al. · Applied Surface Science · 2020 · 161 citations

Transition Metal Chalcogenides, Few-layer Mos2, Engineering +5

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

Xi Tang, Baikui Li, Hamid Amini Moghadam et al. · IEEE Electron Device Letters · 2018 · 151 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Hongtao He, Baikui Li, Hongchao Liu et al. · Applied Physics Letters · 2012 · 114 citations

High-field Linear Magneto-resistance, Engineering, Topological Materials +16

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Jin Wei, Shenghou Liu, Baikui Li et al. · IEEE Electron Device Letters · 2015 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +10