Jin Wei

Gallium nitride-based complementary logic integrated circuits

Zheyang Zheng, Li Zhang, Wenjie Song et al. · Nature Electronics · 2021 · 285 citations

Electrical Engineering, Engineering, Circuit System +3

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Hanxing Wang, Jin Wei, Ruiliang Xie et al. · IEEE Transactions on Power Electronics · 2016 · 261 citations

Dynamic Ron Characterization, Systematic Characterization, Electrical Engineering +10

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Jin Wei, Ruiliang Xie, Han Xu et al. · IEEE Electron Device Letters · 2019 · 171 citations

Device Modeling, -Gan Gate Hemts, Electrical Engineering +13

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

Zheyang Zheng, Wenjie Song, Li Zhang et al. · IEEE Electron Device Letters · 2019 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

Jiabei He, Jin Wei, Song Yang et al. · IEEE Transactions on Electron Devices · 2019 · 123 citations

Semiconductors, -Gan Gate Hemts, Electrical Engineering +12