Ruiliang Xie

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Hanxing Wang, Jin Wei, Ruiliang Xie et al. · IEEE Transactions on Power Electronics · 2016 · 268 citations

Engineering, Electrical Engineering, Electronic Materials +11

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Jin Wei, Ruiliang Xie, Han Xu et al. · IEEE Electron Device Letters · 2019 · 181 citations

Engineering, Electrical Engineering, Materials Engineering +16

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Ruiliang Xie, Hanxing Wang, Gaofei Tang et al. · IEEE Transactions on Power Electronics · 2016 · 147 citations

Engineering, Electrical Engineering, Materials Science +17

GaN power IC technology on <i>p</i> -GaN gate HEMT platform

Jin Wei, Gaofei Tang, Ruiliang Xie et al. · Japanese Journal of Applied Physics · 2019 · 67 citations

Engineering, Electrical Engineering, Microelectronics +16

Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type <i>p</i>-GaN Gate Power HEMTs

Han Xu, Jin Wei, Ruiliang Xie et al. · IEEE Transactions on Power Electronics · 2020 · 55 citations

Engineering, Electrical Engineering, Microelectronics +15