Gaofei Tang

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Hanxing Wang, Jin Wei, Ruiliang Xie et al. · IEEE Transactions on Power Electronics · 2016 · 261 citations

Dynamic Ron Characterization, Systematic Characterization, Electrical Engineering +10

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Jin Wei, Ruiliang Xie, Han Xu et al. · IEEE Electron Device Letters · 2019 · 171 citations

Device Modeling, -Gan Gate Hemts, Electrical Engineering +13

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Ruiliang Xie, Hanxing Wang, Gaofei Tang et al. · IEEE Transactions on Power Electronics · 2016 · 145 citations

Electrical Engineering, Engineering, Power Device +11

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

Jiabei He, Gaofei Tang, Kevin J. Chen · IEEE Electron Device Letters · 2018 · 143 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +14

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Jin Wei, Shenghou Liu, Baikui Li et al. · IEEE Electron Device Letters · 2015 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +10