Jiabei He

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Jin Wei, Ruiliang Xie, Han Xu et al. · IEEE Electron Device Letters · 2019 · 171 citations

Device Modeling, -Gan Gate Hemts, Electrical Engineering +13

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

Jiabei He, Gaofei Tang, Kevin J. Chen · IEEE Electron Device Letters · 2018 · 143 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +14

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

Jiabei He, Jin Wei, Song Yang et al. · IEEE Transactions on Electron Devices · 2019 · 123 citations

Semiconductors, -Gan Gate Hemts, Electrical Engineering +12

<i>p</i>-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

Li Zhang, Zheyang Zheng, Song Yang et al. · IEEE Electron Device Letters · 2020 · 95 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

Song Yang, Sen Huang, Jin Wei et al. · IEEE Electron Device Letters · 2020 · 89 citations

Wide-bandgap Semiconductor, Deep-level Transient Spectroscopy, Electrical Engineering +14