Zheyang Zheng - Concepedia

Author

Zheyang Zheng

Hong Kong University of Science and Technology ORCID

Also Known As

Wang, G., Z. Zheng, Zheng, Zheyang, Zheyang Zheng, Zhizi Zheng

133

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

Hong Kong University of Science and Technology University of Hong Kong Southern University of Science and Technology Peking University Institute of Microelectronics

About

Zheyang Zheng is an author at Hong Kong University of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	54	2.4K
2	Applied Physics	26	44	1.7K
3	Chemistry	2	2	59
4	Computer Engineering	2	2	99
5	Chemical Engineering	1	1	46

Zheyang Zheng

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
Gallium nitride-based complementary logic integrated circuits Zheyang Zheng, Li Zhang, Wenjie Song, Nature Electronics Electrical EngineeringEngineeringCircuit SystemIntegrated CircuitsOptoelectronics	2021	285
High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform Zheyang Zheng, Wenjie Song, Li Zhang, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRatio Enhancement-mode BuriedPlanar Isolation	2019	133
GaN Power Integration Technology and Its Future Prospects Jin Wei, Zheyang Zheng, Gaofei Tang, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringFuture ProspectsPower Device	2023	104
<i>p</i>-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability Li Zhang, Zheyang Zheng, Song Yang, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2020	95
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy Song Yang, Sen Huang, Jin Wei, IEEE Electron Device Letters Wide-bandgap SemiconductorDeep-level Transient SpectroscopyElectrical EngineeringSemiconductor TechnologyEngineering	2020	89
OFF-State Drain-Voltage-Stress-Induced <i>V</i> <sub>TH</sub> Instability in Schottky-Type p-GaN Gate HEMTs Junting Chen, Mengyuan Hua, Jin Wei, IEEE Journal of Emerging and Selected Topics in Power Electronics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2020	84
650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode Jiacheng Lei, Jin Wei, Gaofei Tang, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringDouble-channel DesignEngineering	2017	82
E-Mode <i>p-n</i> Junction/AlGaN/GaN (PNJ) HEMTs Chengcai Wang, Mengyuan Hua, Junting Chen, IEEE Electron Device Letters Electrical EngineeringEngineeringApplied PhysicsGate MetalAluminum Gallium Nitride	2020	82
Planar GaN Power Integration – The World is Flat Kevin J. Chen, Jin Wei, Gaofei Tang, Electrical EngineeringGan Power IntegrationEngineeringGan Power IcPower Device	2020	72
Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET Jiahui Sun, Jin Wei, Zheyang Zheng, IEEE Journal of Emerging and Selected Topics in Power Electronics Electrical EngineeringWithstand CapabilityEngineeringSemiconductor DeviceHigh Voltage Engineering	2019	65

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