Matteo Bosi - Concepedia

Author

Matteo Bosi

Institute of Materials for Electronics and Magnetism ORCID

Also Known As

Arumainhatan, S., Bosi M, Bosi, M., Bosi, Matteo, Gombia, E., M Bosi, M. Bosi, Matteo BOSİ, Matteo Bosi

195

Publications

3.9K

Citations

H-Index

106

Concepts

All Affiliations

Institute of Materials for Electronics and Magnetism University of Parma Shenzhen University Taras Shevchenko National University of Kyiv Hungarian Academy of Sciences

About

Matteo Bosi is an author at Institute of Materials for Electronics and Magnetism specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	58	2.8K
2	Applied Physics	27	52	2.7K
3	Natural Sciences	2	2	36
4	Health Sciences	1	1	44
5	Biomedical Engineering	1	1	15

Matteo Bosi

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
The real structure of ε-Ga<sub>2</sub>O<sub>3</sub> and its relation to κ-phase Ildikó Cora, Francesco Mezzadri, Francesco Boschi, CrystEngComm Crystal StructureEngineeringPna21 Space GroupStatistical Field TheoryQuantum Materials	2017	347
Crystal Structure and Ferroelectric Properties of ε-Ga<sub>2</sub>O<sub>3</sub> Films Grown on (0001)-Sapphire Francesco Mezzadri, G. Calestani, Francesco Boschi, Inorganic Chemistry	2016	247
The potential of III‐V semiconductors as terrestrial photovoltaic devices Matteo Bosi, C. Pelosi Progress in Photovoltaics Research and Applications EngineeringIii‐v SemiconductorsSemiconductor MaterialsPhotovoltaic DevicesOptoelectronic Devices	2006	196
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD Francesco Boschi, Matteo Bosi, Tatiana Berzina, Journal of Crystal Growth Oxide HeterostructuresMaterials EngineeringMaterials ScienceEngineeringApplied Physics	2016	192
Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence Sergii Golovynskyi, Iqra Irfan, Matteo Bosi, Applied Surface Science Transition Metal ChalcogenidesFew-layer Mos2EngineeringPhotoluminescencePhysics	2020	161
Ga<sub>2</sub>O<sub>3</sub>polymorphs: tailoring the epitaxial growth conditions Matteo Bosi, Piero Mazzolini, L. Seravalli, Journal of Materials Chemistry C Materials EngineeringInorganic ChemistryEpitaxial Growth ConditionsEngineeringCrystal Growth Technology	2020	138
Thermal stability of ε-Ga2O3 polymorph R. Fornari, M. Pavesi, V. Montedoro, Acta Materialia Materials ScienceEngineeringApplied PhysicsGallium OxideFunctional Materials	2017	129
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M. Pavesi, Filippo Fabbri, Francesco Boschi, Materials Chemistry and Physics Materials ScienceEngineeringApplied Physicsε-Ga2o3 EpilayersOptoelectronics	2017	128
Germanium: Epitaxy and its applications Matteo Bosi, G. Attolini Progress in Crystal Growth and Characterization of Materials EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum Materials	2010	118
Review on Atomic Layer Deposition and Applications of Oxide Thin Films Joice Sophia Ponraj, G. Attolini, Matteo Bosi Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences EngineeringThin Film Process TechnologyChemical DepositionNanoelectronicsMemory Device	2013	102

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