Hamid Amini Moghadam

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

Xi Tang, Baikui Li, Hamid Amini Moghadam et al. · IEEE Electron Device Letters · 2018 · 157 citations

Engineering, Electrical Engineering, Physics +15

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Sima Dimitrijev, Jisheng Han, Hamid Amini Moghadam et al. · MRS Bulletin · 2015 · 82 citations

Engineering, Electrical Engineering, Materials Science +16

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han et al. · IEEE Transactions on Electron Devices · 2015 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

Seyed Ehsan Jamali Mahabadi, Ali A. Orouji, Parviz Keshavarzi et al. · Semiconductor Science and Technology · 2011 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps

Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann et al. · IEEE Transactions on Electron Devices · 2022 · 45 citations

Engineering, Electrical Engineering, Microelectronics +16