Daniel Haasmann

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han et al. · IEEE Transactions on Electron Devices · 2015 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Integrated, Transparent Silicon Carbide Electronics and Sensors for Radio Frequency Biomedical Therapy

Tuan‐Khoa Nguyen, Sharda Yadav, Thanh‐An Truong et al. · ACS Nano · 2022 · 50 citations · Full text

Engineering, Bioengineering, Biomedical Engineering +17

Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC

Daniel Haasmann, Sima Dimitrijev · Applied Physics Letters · 2013 · 47 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps

Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann et al. · IEEE Transactions on Electron Devices · 2022 · 45 citations

Engineering, Electrical Engineering, Microelectronics +16

Quantified density of performance-degrading near-interface traps in SiC MOSFETs

Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann et al. · Scientific Reports · 2022 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17