Jisheng Han

Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

Xi Tang, Baikui Li, Hamid Amini Moghadam et al. · IEEE Electron Device Letters · 2018 · 157 citations

Engineering, Electrical Engineering, Physics +15

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Li Wang, Sima Dimitrijev, Jisheng Han et al. · Thin Solid Films · 2011 · 107 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Stress or drug priming induces reinstatement of extinguished conditioned place preference

Bin Wang, Fei Luo, Weiting Zhang et al. · Neuroreport · 2000 · 107 citations

Medicine, Pharmacology, Psychology +17

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Sima Dimitrijev, Jisheng Han, Hamid Amini Moghadam et al. · MRS Bulletin · 2015 · 82 citations

Engineering, Electrical Engineering, Materials Science +16

Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

Kuan Yew Cheong, Sima Dimitrijev, Jisheng Han et al. · Journal of Applied Physics · 2003 · 78 citations

Engineering, Materials Engineering, Materials Science +17