Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C - Concepedia

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Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

DOI Full Paper Access

106

Citations

24

References

2011

Year

Li Wang, Sima Dimitrijev, Jisheng Han, Alan Iacopi, Leonie Hold, Philip Tanner, H.B. Harrison

Thin Solid Films

Materials ScienceMaterials EngineeringEngineeringApplied Physics150-Mm SiSupply EpitaxySemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthCarbide

References

	Year	Citations

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