Leonie Hold

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Li Wang, Sima Dimitrijev, Jisheng Han et al. · Thin Solid Films · 2011 · 107 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Li Wang, Sima Dimitrijev, Jisheng Han et al. · Journal of Crystal Growth · 2011 · 67 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

Hoang‐Phuong Phan, Han‐Hao Cheng, Toan Dinh et al. · ACS Applied Materials & Interfaces · 2017 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Philip Tanner, Alan Iacopi, Hoang‐Phuong Phan et al. · Scientific Reports · 2017 · 45 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

Silma Alberton Corrêa, C. Radtke, G. V. Soares et al. · Applied Physics Letters · 2009 · 35 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17