<font>SiC</font> MATERIAL PROPERTIES

Abstract

This chapter briefly summarizes device-relevant material properties of the wide bandgap semiconductor silicon carbide. The polytypes 4 H -, 6 H - and 3 C - SiC are predominantly considered. These SiC polytypes can reproducibly be grown as single crystals; they have superior electronic and thermal material properties. The conductivity type can be adjusted by shallow donors and acceptors. Special sections are related to the diffusion of dopants, to the impurity conduction, to the minority carrier lifetime and to the different types of traps generated at the interface of thermally grown SiC/SiO 2 structures.