L. Storasta

Deep levels created by low energy electron irradiation in 4H-SiC

L. Storasta, J. P. Bergman, Erik Janzén et al. · Journal of Applied Physics · 2004 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

L. Storasta, Hidekazu Tsuchida · Applied Physics Letters · 2007 · 198 citations

Engineering, Materials Engineering, Materials Science +17

Electrically active defects in <i>n</i>-type 4H–silicon carbide grown in a vertical hot-wall reactor

J. Zhang, L. Storasta, J. P. Bergman et al. · Journal of Applied Physics · 2003 · 187 citations

Engineering, Materials Engineering, Materials Science +17

Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers

L. Storasta, Hidekazu Tsuchida, Tetsuya Miyazawa et al. · Journal of Applied Physics · 2008 · 128 citations

Engineering, Materials Engineering, Materials Science +17

Pseudodonor nature of the DI defect in 4H-SiC

L. Storasta, Fredrik Carlsson, S.G. Sridhara et al. · Applied Physics Letters · 2001 · 92 citations

Natural Sciences, Materials Science, Physics +17