J. P. Bergman is an author at Linköping University specializing in engineering, applied physics, and electrical engineering.
Top concepts
EngineeringApplied PhysicsPower ElectronicsElectrical EngineeringSemiconductorsPower SemiconductorsPhysicsThin FilmsAtomic PhysicsDefect Tolerance
Publications per year
1995–2005
4
4
Deep levels created by low energy electron irradiation in 4H-SiC
L. Storasta, J. P. Bergman, Erik Janzén et al. · Journal of Applied Physics · 2004 · 279 citations
A 4.5 kV 6H silicon carbide rectifier
Olof Kordina, J. P. Bergman, Anne Henry et al. · Applied Physics Letters · 1995 · 117 citations
Semiconductor Technology, Electrical Engineering, Engineering +13
A 3 kV Schottky barrier diode in 4H-SiC
Q. Wahab, T. Kimoto, A. Ellison et al. · Applied Physics Letters · 1998 · 76 citations
Degradation of SiC High-Voltage pin Diodes
Seoyong Ha, J. P. Bergman · MRS Bulletin · 2005 · 10 citations
Rows per page
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