A 4.5 kV 6H silicon carbide rectifier

Abstract

Reactive ion etched silicon carbide mesa pin diodes with voltage blocking capabilities as high as 4.5 kV have been fabricated from 6H–SiC epitaxial layers. The epitaxial structure was grown by chemical vapor deposition on an n+ substrate giving a low-doped 45 μm thick n− active base layer and a 1.5 μm thick high-doped p+ emitter layer on top. A high minority carrier lifetime of 0.43 μs in the n− active base layer provides good on-state properties with a typical forward voltage drop of 6 V at 100 A/cm2.