L.P. Ramberg

A 4.5 kV 6H silicon carbide rectifier

Olof Kordina, J. P. Bergman, Anne Henry et al. · Applied Physics Letters · 1995 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance

L.P. Ramberg, P.M. Enquist, Y.-K. Chen et al. · Journal of Applied Physics · 1987 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor

P.M. Enquist, L.P. Ramberg, L.F. Eastman · Journal of Applied Physics · 1987 · 31 citations

Engineering, Electrical Engineering, Materials Science +14

Abrupt interface AlGaAs/GaAs heterojunction bipolar transistors: Carrier heating and junction characteristics

L.P. Ramberg, Tadao Ishibashi · Journal of Applied Physics · 1988 · 22 citations

Engineering, Electrical Engineering, Materials Science +14

Junction barrier Schottky diodes in 6H SiC

Carl‐Mikael Zetterling, Fanny Dahlquist, Nils Lundberg et al. · Solid-State Electronics · 1998 · 16 citations

Engineering, Electrical Engineering, Materials Science +12