P.M. Enquist

Low Cost of Ownership scalable copper Direct Bond Interconnect 3D IC technology for three dimensional integrated circuit applications

P.M. Enquist, G. G. Fountain, Carl Petteway et al. · 2009 · 121 citations

Engineering, Materials Engineering, Materials Science +16

Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy

P.M. Enquist, G. W. Wicks, L.F. Eastman et al. · Journal of Applied Physics · 1985 · 114 citations

Engineering, Materials Engineering, Materials Science +17

Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

P.M. Enquist, J.A. Hutchby, T. J. de Lyon · Journal of Applied Physics · 1988 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

<i>p</i>-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride

P.M. Enquist · Applied Physics Letters · 1990 · 72 citations

Engineering, Materials Engineering, Materials Science +14

Room temperature SiO2∕SiO2 covalent bonding

Qiaoling Tong, G. G. Fountain, P.M. Enquist · Applied Physics Letters · 2006 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +12