G. G. Fountain

Low interface trap density for remote plasma deposited SiO2 on <i>n</i>-type GaN

H. C. Casey, G. G. Fountain, R. G. Alley et al. · Applied Physics Letters · 1996 · 175 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Low Cost of Ownership scalable copper Direct Bond Interconnect 3D IC technology for three dimensional integrated circuit applications

P.M. Enquist, G. G. Fountain, Carl Petteway et al. · 2009 · 121 citations

Copper Dbireg Interconnections, Engineering, Integrated Circuits +21

On the feasibility of growing dilute C<i>x</i>Si1−<i>x</i> epitaxial alloys

J. B. Posthill, R. A. Rudder, S. V. Hattangady et al. · Applied Physics Letters · 1990 · 91 citations

Materials Engineering, Materials Science, Semiconductors +11

Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films

R. A. Rudder, G. G. Fountain, R. J. Markunas · Journal of Applied Physics · 1986 · 79 citations

Materials Science, Deposition Precursor Species, Epitaxial Growth +11

Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

P. D. Richard, R. J. Markunas, G. Lucovsky et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 78 citations

Engineering, Silicon On Insulator, Plasma Processing +20