On the feasibility of growing dilute C<i>x</i>Si1−<i>x</i> epitaxial alloys

Abstract

Dilute CxSi1−x epitaxial films have been grown on Si(100) by remote plasma-enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x-ray diffraction and transmission electron microscopy.