T. J. de Lyon

Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

T. J. de Lyon, J. M. Woodall, Mark S. Goorsky et al. · Applied Physics Letters · 1990 · 130 citations

Materials Science, Semiconductors, Electrical Engineering +15

Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

P.M. Enquist, J.A. Hutchby, T. J. de Lyon · Journal of Applied Physics · 1988 · 104 citations

Wide-bandgap Semiconductor, Engineering, Nanoelectronics +16

HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

E. P. Smith, L. T. Pham, G. M. Venzor et al. · Journal of Electronic Materials · 2004 · 74 citations

Photonics, Engineering, Infrared Sensor +8

High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs

T. J. de Lyon, N.I. Buchan, P. D. Kirchner et al. · Applied Physics Letters · 1991 · 67 citations

Materials Engineering, Semiconductors, Electrical Engineering +12

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

J. B. Varesi, R. E. Bornfreund, A. C. Childs et al. · Journal of Electronic Materials · 2001 · 58 citations

Mbe-grown Hgcdte, Electrical Engineering, Wafer Scale Processing +7