T. J. de Lyon - Concepedia

Author

T. J. de Lyon

HRL Laboratories (United States)

Also Known As

T J de Lyon, T. J. De Lyon, T. J. de Lyon, T. J. deLyon, T.J de Lyon, T.J. de Lyon, Terence J. de Lyon

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)RTX (United States)Inflammatory Response Research (United States)IBM Research - Thomas J. Watson Research Center Sensors (United States)

About

T. J. de Lyon is an author at HRL Laboratories (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	37	1.2K
2	Applied Physics	20	37	1.1K
3	Natural Sciences	3	3	79
4	Education	1	1	11
5	Chemical Engineering	1	1	67

T. J. de Lyon

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy T. J. de Lyon, J. M. Woodall, Mark S. Goorsky, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringEngineeringPhysics	1990	130
Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy P.M. Enquist, J.A. Hutchby, T. J. de Lyon Journal of Applied Physics Wide-bandgap SemiconductorEngineeringNanoelectronicsAbrupt Zinc ProfilesGallium Arsenide	1988	104
HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection E. P. Smith, L. T. Pham, G. M. Venzor, Journal of Electronic Materials PhotonicsEngineeringInfrared SensorOptical PropertiesSpectroscopy	2004	74
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs T. J. de Lyon, N.I. Buchan, P. D. Kirchner, Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringChemical EngineeringEngineering	1991	67
Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates J. B. Varesi, R. E. Bornfreund, A. C. Childs, Journal of Electronic Materials Mbe-grown HgcdteElectrical EngineeringWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)	2001	58
Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates T. J. de Lyon, D. Rajavel, S. M. Johnson, Applied Physics Letters Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringCrystalline Defects	1995	56
LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE K. T. Woodhouse, R.C. Newman, T. J. de Lyon, Semiconductor Science and Technology Wide-bandgap SemiconductorEngineeringIi-vi SemiconductorElectron SpectroscopyGaas Films	1991	54
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications T. J. de Lyon, R. Rajavel, Julian A. Vigil, Journal of Electronic Materials EngineeringPhysicsOptical PropertiesApplied PhysicsFocal-plane Arrays	1998	44
Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays S. M. Johnson, T. J. de Lyon, C. A. Cockrum, Journal of Electronic Materials Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsInfrared Sensor	1995	39
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP T. J. de Lyon, N.I. Buchan, P. D. Kirchner, Journal of Crystal Growth Materials ScienceEngineeringCarbon DopingApplied PhysicsMolecular Beam Epitaxy	1991	38

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